CBN preparation, properties and n-type doping

CBN because of its high hardness, high thermal stability and chemical stability, excellent physical and chemical properties, and much attention. In recent years, cubic boron nitride thin films and properties of international research has been one of the hot, but it is also one of the difficulties. This paper studies the preparation of cubic boron nitride, nature and content of the n-type doping. RF sputtering on Si synthetic diamond powder  were successfully prepared high-quality cubic boron nitride film, reached the international advanced level. And a negative substrate bias voltage of the RF power on the preparation of cubic boron nitride thin films of cubic Abrasive grinding is deposited on the P-type substrate, the target for the h-BN target, the sputtering gas is a mixture of argon and nitrogen and Cheng, sample preparation process, the substrate plus DC negative bias. Film composition by infrared absorption spectroscopy and X-ray photoelectron spectroscopy logo, film morphology observed by atomic force microscopy. Experiments show that cubic boron nitride thin film nucleation and growth conditions of the window is very narrow, so difficult to synthesize cubic boron nitride films. To get the cubic boron nitride film, a negative bias can not be less than 90V, the power can not be less than 200W. When the negative bias of 200V, 300W, when the film cubic phase content of 92.8%.