Bias and the coating time on the Growth of Cubic Boron Nitride Films

Using bias auxiliary radio frequency plasma enhanced pulsed laser deposition (RF-PEPLD) method at room temperature (25 ℃) Preparation of cubic boron nitride (c-BN) thin films, a preliminary study of the deposition parameters: the laser energy density, RF power, substrate negative bias and cubic boron nitride coating time on the growth of the film, and analyzed at room temperature using RF-PEPLD cubic boron nitride thin films deposited by the formation process and mechanism. High-energy pulsed laser at  grinding wheel , high-purity hexagonal boron nitride sintered bombardment (h-BN) target in the vacuum reaction chamber will BN films deposited on silicon substrate. Fourier transform infrared absorption (FTIR) spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (STM) measurements showed that the film on the substrate BN high content of cubic phase and the grain size uniform, compact polycrystalline diamond , crystal was the rule and hexagonal corners. Various deposition parameters by analyzing the effect of growth of the films, that three deposition parameters: laser energy density, the RF power and the substrate bias voltage is temperature cubic boron nitride thin films grown key factor, and on this basis a preliminary interpretation cubic boron nitride films formed over