Beryllium-doped cubic boron nitride or silicon and sulfur doped cubic boron nitride

Diamond is a lot of excellent physical and chemical properties for a new type of functional materials, the performance of good high-temperature semiconductor materials under extreme conditions suitable for the production of electronic devices in the development of diamond electronics side, many studies have been reported, however, As n-type doped diamond is extremely difficult, so the application of diamond electronics has been very limited so far no substantive breakthrough. cubic grinding wheel and diamond has a similar structure and nature of its hardness only to diamond , at 1100 ℃ atmospheric environment, its chemical properties remain unchanged. Moreover, it is - the largest bandgap of the tribe (~ 6.4e V) compound semiconductor materials. Since high pressure size than the synthesis of cubic  synthetic diamond small measure to its electrical properties cause great difficulties, few studies in this area, however, beryllium-doped cubic boron nitride or silicon and sulfur-doped cubic boron nitride have been reported. Mishima a conventional high pressure process temperature homogeneity of the cubic boron nitride pn junction temperature, but did not make the ohmic electrode.