The current theory is the main factor to slip line because there is stress on the substrate sheet and the substrate crystal growth defects

The current theory is the main factor to slip line because there is stress on the substrate sheet and the substrate crystal growth defects. Classified according to the cause of stress for the mechanical and thermal stresses, and the stress on the substrate sheet is  synthetic diamond  in the ingot diameter roll mill and the wafer chamfering step. Therefore, to reduce the stresses generated during chamfering and how to Abrasive grinding wheel of stress on the epitaxial wafer is essential. The mechanical properties of silicon at room temperature, the silicon is a brittle non-malleable material, but at temperatures above 700-800 ℃, the silicon and has a clear thermoplastic, under the stress will show plastic deformation. Tensile stress greater than silicon shear stress, so the process is prone to the fragmentation.