Amorphous silicon thin film will not be light-induced attenuation effect (SW effect), it is considered highly efficient

Not only polycrystalline silicon thin film made ​​of silicon material having a bulk high mobility and high stability characteristics, and will not be an amorphous silicon thin film light-induced attenuation effect (SW effect), it is considered a high efficiency, low cost solar cell is ideal materials. Preparation of polycrystalline  synthetic diamond powder  mainly solid phase crystallization (SPC), excimer laser crystallization (ELA), metal-induced crystallization (MIC) and chemical vapor deposition (CVD) 3 ways. Of which the first two processes more complex, polycrystalline  synthetic diamond  prepared by metal induced the research team also made some more ideal research, Xia Donglin and other aluminum-induced electric field assisted prepared a  Diamond blade  silicon thin film. However, the polysilicon thin film metal induced high levels of metal impurities can not be directly used in the production of solar cells absorbent layer. CVD method, a hot filament chemical vapor deposition (HWCVD) has a low-temperature, low-cost, fast growth characteristics, and there is no plasma bombardment, little damage to the film.