Preparation Research progress in recent years and an outlook on future trends and prospects

In recent years, the polysilicon film is widely used in thin-film transistors (TFTs) and thin-film solar cells and other electronic devices by people's attention. In the polycrystalline silicon thin film in the various preparation techniques, hot filament chemical vapor deposition (HWCVD) its low deposition temperatures, high deposition rate and low cost which are widely used. First, an overview of hot  polycrystalline diamond  vapor deposition (HWCVD) polycrystalline silicon thin film preparation process of development, highlighting the preparation of this research progress in recent years and an outlook on future trends and prospects. On this basis, the paper in the preparation of high-quality  cubic boron nitride  silicon thin film has done some exploratory work: at a closer distance hot wire and the substrate (5mm ~ 10mm) under the (100) silicon wafers and ordinary glass slide high-quality polycrystalline silicon thin film  cutting tools  studied various process parameters on the crystal orientation of the film, the grain size and morphology were investigated. Study found that: hot wire and the substrate close spacing (5mm) of the polysilicon thin film crystal growth direction have a significant impact.