Polysilicon piezoresistive theory is late in the last century, many researchers have formed the basis of a large number of experiments

Existing theories polysilicon piezoresistive late in the last century a large number of researchers formed on an experimental basis, and in the ordinary polycrystalline  cubic boron nitride  (thickness generally between a few hundred nanometers to several microns) piezoresistive Experimental and applications has been verified. Existing theory, the larger  polycrystalline diamond  the polycrystalline silicon thin film strain factor (GF) greater; heavy doping cases higher doping of the polysilicon thin film GF smaller. In general, the thinner the film, the smaller the grain, in accordance with existing silicon piezoresistive theory close to or less than 100nm thickness polysilicon thin films GF should have a smaller value.