Contingency coefficient of polysilicon thin films

By LPCVD method under different conditions in polycrystalline thin films were prepared to study the process conditions on the polysilicon nano-thin film resistors, strain coefficients and their temperature coefficient, select the optimal  abrasive wheels . In this case, the gauge factor of polysilicon thin films to 34, compared with the same doping concentration ordinary polycrystalline silicon thin film is 25% or more;  grinding wheel  coefficient temperature coefficient 1 × 10-3 / ℃ nearby small than ordinary polycrystalline silicon thin film nearly doubled; resistance temperature coefficient of less than 1 × 10-4 / ℃, than ordinary  polycrystalline diamond  silicon thin film nearly an order of magnitude smaller. The selection of optimum conditions for polycrystalline thin films of the pressure sensor applied research to provide the necessary design basis.