RF sputtering on Si substrates prepared by CBN

The main process parameters influence on the preparation of cubic boron nitride, boron nitride n-type doping and p-Si/n-BN heterojunction characteristics, etc., to obtain the following main results. Systematic study of the process parameters on the preparation of cubic boron nitride thin films. RF sputtering on Si substrate preparation CBN, target of hBN,. Working gas is argon. Process parameters are RF power,  cubic boron nitride  voltage, substrate temperature and the working pressure and so on. Systematic study of the process parameters on the impact of cubic boron nitride, CBN experiments show that only a very narrow window generator. cutting tools  bias on cubic  Diamond blade nucleation and growth has a very important influence, there is bias threshold below which can not produce cubic boron nitride. Bias different deposition windows different thresholds, in our experimental conditions, the threshold value is 125V.