Grinding technology to become the light back thinned silicon wafer and the mainstream graphics processing technology

The new ultra-high-precision wafer planarization process has been a lot of research, which, using fixed abrasive silicon ultra-precision grinding technology is gradually replacing the traditional grinding technology to become light and graphics back of the silicon wafer thinning mainstream processing technology. However, the current silicon ultra-precision grinding wheel is generally used in micronized  Polycrystalline diamond  wheel, diamond  Synthetic diamond , the wafer surface will inevitably produce grinding damage, but also the need for further chemical mechanical polishing. Therefore, it is necessary to study and explore new principles using the new wheel silicon processing methods to obtain super smooth surface grinding low damage. This paper proposes the use of soft abrasive grinding wafers low damage new method;

EDM shaping system for monitoring the process and the ELID grinding process has a voltage

Developed a real-time data collection and analysis system for monitoring the process and the ELID grinding EDM shaping process, voltage, current, and other characteristics of the grinding force signal to  Diamond blade  metal bond wheel of precision plastic powder and silicon nitride revealed ELID phenomenon grinding process grinding, grinding  abrasive wheels  the technical means of protection. In metal-bonded diamond powder Precision Grinding EDM shaping process, the operating voltage and current  abrasive grinding  not only makes access to effective and discriminant power electric gage gage whether the shaping ability becomes very simple, and can find no-load and occurrence of short circuit, help to improve the efficiency and plastic shaping accuracy.

Conventional diamond grinding wheel inevitably single crystal sapphire substrate surface damage

Among them, the use of fixed abrasive ultra-precision grinding technology is currently a hot research and has achieved remarkable results, but the traditional diamond grinding wheel inevitably will produce single-crystal sapphire substrate surface damage, you need to follow the chemical mechanical polishing to remove the damaged layer,  polycrystalline diamond the processing efficiency of the substrate. In response to these problems, in order to efficiently lossless processing monocrystalline sapphire substrates, we propose the use of soft abrasive grinding wheel single-crystal  synthetic diamond  methods, the use of abrasive wheel, single-crystal sapphire additives and chemical reaction between the solid phase and a soft abrasive mechanical friction to achieve single-crystal sapphire substrates super smooth, low damage grinding.

Change the wafer planarization processing technical problems faced by many outstanding

IC chip in order to increase production, reduce unit manufacturing costs tend large wafer diameter. As wafer diameter increases, in order to ensure sufficient strength of silicon, a corresponding increase in the thickness of the wafer; the contrary, in order to  cubic boron nitride  of advanced IC chip packaging technology, thinner thickness of the chip. These changes make the wafer planarization process faces many outstanding technical issues: IC feature size decreases, for wafer  cutting tools  and surface quality high demands; wafer diameter increases, the process is easy to warpage, machined surface type easy to ensure accuracy; silicon thickness  abrasive grinding and chip thickness decreases, so that the back of wafer thinning process increases the amount of material removal, improve processing efficiency become a serious problem.

Ultra-precision grinding technology is the processing of large-size wafers main method

At present, the fixed abrasive grinding technology of ultra-precision machining of large-size wafers is the main method, but the traditional diamond grinding technology will  polycrystalline diamond  to the wafer surface and sub-surface damage, thereby affecting the chemical mechanical polishing after the Road (CMP) process of machining time. The existence of CMP  synthetic diamond  efficiency is low, alkaline / acid slurry handling difficult issues. For monocrystalline silicon wafer grinding problems, this paper analyzes in depth the soft abrasive chemical mechanical grinding (CMG) silicon technology, based on the effects of different oxides soft abrasive grinding performance.

The cutting tool and the workpiece material and the higher performance requirements

Being on the cutting tool and the workpiece material and performance have higher requirements, the cutting process research is more important. Based on the preliminary studies, the paper honing honing wheel surface  synthetic diamond  cutting characteristics of CBN grains were analyzed, as follows: the use of finite element analysis software for  cubic boron nitride  theory, simulation single CBN grains of 45 steel cutting process. Unit with 8-node linear three-dimensional solid element, and apply an algorithm to establish a single point of integration machining explicit dynamic analysis of three-dimensional finite element model. Model uses the plasticity model.

Error correction capability shortcomings and weak, so the process of honing is necessary

Honing process as the gear surface finishing, on the gear tooth surface to be machined quality and service life has a direct impact. But honing process there is often a low profile accuracy, the cutting efficiency is low, the error correction capability  polycrystalline diamond , so the honing process research is necessary. Honing rely mainly on the surface of the honing wheel CBN (cubic boron nitride) abrasive gear to be grinding wheel by extrusion and cutting. Therefore CBN abrasive cutting process, to be processed directly influences the quality and performance honing wheel. And with modern cutting to high-quality, efficient, sophisticated, intelligent direction.